Datasheet4U Logo Datasheet4U.com

GT28F016C3 - 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY

This page provides the datasheet information for the GT28F016C3, a member of the GT28F032C3 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY family.

📥 Download Datasheet

Datasheet preview – GT28F016C3

Datasheet Details

Part number GT28F016C3
Manufacturer Intel
File Size 360.89 KB
Description 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY
Datasheet download datasheet GT28F016C3 Datasheet
Additional preview pages of the GT28F016C3 datasheet.

📁 Similar Datasheet

  • GT20D101 - Silicon N-Channel Transistor (Toshiba Semiconductor)
  • GT20D201 - Silicon P-Channel Transistor (Toshiba Semiconductor)
  • GT20G101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT20G101SM - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT20G102 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT20G102SM - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT20J101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT20J121 - Silicon N-Channel IGBT (Toshiba)
  • GT20J301 - Silicon N-Channel IGBT (Toshiba Semiconductor)
  • GT20J311 - Silicon N-Channel IGBT (Toshiba Semiconductor)
Other Datasheets by Intel

Full PDF Text Transcription

Click to expand full text
E PRODUCT PREVIEW 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces Overall System Power  12 V for Fast Production Programming n High Performance  2.7 V–3.6 V: 90 ns Max Access Time  3.0 V–3.
Published: |