N28F512 Overview
28F512 512K (64K x 8) CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 1 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 1 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g5% VPP Y High-Performance Read 120 ns Maximum Access Time Y CMOS Low Power Consumption 10 mA Typical Active Current 50 mA Typical Standby Current 0W Data Retention Power Y Integrated Program Erase Stop Timers Y mand Register Architecture for Microprocessor Microcontroller patible Write Interface