RD38F4460LVY
RD38F4460LVY is Wireless Memory System manufactured by Intel.
Features
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Device Memory Architecture
- - Flash die density: 128-, 256-Mbit
- LPSDRAM die density: 128-, 256-Mbit
- Top or Bottom parameter flash configuration Device Voltage
- - Core: VCC = 1.8 V (typ.)
- I/O: VCCQ = 1.8 V (typ.) Device mon Performance
- - Buffered EFP: 5µs / Byte (typ.) per die
- Buffer Program: 7µs / Byte (typ.) per die
- Concurrent Buffered EFP: 6.4-Mbps effective with 4 flash dies Device mon Architecture .
- - Asymmetrical blocking structure
- 16-KWord parameter blocks (Top or Bottom); 64-KWord main blocks
- - Zero-latency block locking
- Absolute write protection with block lock down using F-VPP and F-WP# Device Packaging
- 103 active balls; 9 x 12 ball matrix
- - Area: 9 x 11 mm to 11 x 11 mm
- Height: 1.4 mm SDRAM Architecture and Performance
- Clock rate: 105 MHz
- Four internal banks
- Burst Length: 1, 2, 4, 8, or full page
Code Segment Flash Read Performance
- 85 ns initial access
- 25 ns Asynchronous Page read
- 14 ns Synchronous read (t CHQV)
- 54 MHz (max.) CLK Data Segment Flash Performance
- 170 ns initial access
- 55 ns Asynchronous Page read Code Segment Flash Architecture
- Hardware Read-While-Write/Erase
- Multiple 8-Mbit / 16-Mbit partition sizes
- 2-Kbit One-Time-Programmable Protection Register Data Segment Flash Architecture
- Software Read-While-Write/Erase
- Single partition size die Flash Software
- Intel FDI, Intel PSM, and Intel VFM
- mon Flash Interface
- Basic/Extended mand Set Quality and Reliability
- Extended temperature:
- 25 °C to +85...
