2N5199 Datasheet PDF

ELECTRICAL CHARACTERISTICS

Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) IDSS Dynamic

ELECTRICAL CHARACTERISTICS

Common-Source Forward Transconductance gfs Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage ~eN Differencial Gate-Source Voltage Differencial Gate Source Voltage with Temperature (VGS1-VGS2) Δ│VGS1-VGS2│ ΔT Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating 2.6 mW/oC Storage Temperature Range -65oC to +150oC 2N5196, 2N5197, 2N5198, 2N5199 Min Typ Max Unit -50 V Process NJ16 Test Conditions IG = -1