2N5397 Description
The -25V InterFET 2N5397 and 2N5398 are targeted for low noise amplifier stages as well as mixer and oscillator designs. Gate leakages are typically less than 10pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications.
2N5397 Key Features
- InterFET N0026L Geometry
- Low Noise: 3 nV/√Hz Typical
- Low Ciss: 5.0pF Typical
- Low Leakage: 10pA Typical
- RoHS pliant
- SMT, TH, and Bare Die Package options