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IFN113 - N-Channel JFET

General Description

The -50V InterFET IFN113 is a low noise high gain replacement for the Japanese 2SK113 JFET.

Gate leakages are typically less than 50pA at room temperatures.

The TO-18 package is hermetically sealed and suitable for military applications.

Key Features

  • InterFET N0132S Geometry.
  • Low Noise: 1.2 nV/√Hz Typical.
  • High Gain: 15mS Typical.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet Details

Part number IFN113
Manufacturer InterFET
File Size 578.42 KB
Description N-Channel JFET
Datasheet download datasheet IFN113 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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InterFET Product Folder Technical Support Order Now IFN113 IFN113 N-Channel JFET Features • InterFET N0132S Geometry • Low Noise: 1.2 nV/√Hz Typical • High Gain: 15mS Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Low-Noise, High Gain • Replacement for Japanese 2SK113 Description The -50V InterFET IFN113 is a low noise high gain replacement for the Japanese 2SK113 JFET. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.