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IFN113 - N-Channel JFET

Datasheet Summary

Description

The -50V InterFET IFN113 is a low noise high gain replacement for the Japanese 2SK113 JFET.

Gate leakages are typically less than 50pA at room temperatures.

The TO-18 package is hermetically sealed and suitable for military applications.

Features

  • InterFET N0132S Geometry.
  • Low Noise: 1.2 nV/√Hz Typical.
  • High Gain: 15mS Typical.
  • RoHS Compliant.
  • SMT, TH, and Bare Die Package options.

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Datasheet preview – IFN113

Datasheet Details

Part number IFN113
Manufacturer InterFET
File Size 578.42 KB
Description N-Channel JFET
Datasheet download datasheet IFN113 Datasheet
Additional preview pages of the IFN113 datasheet.

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Full PDF Text Transcription

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InterFET Product Folder Technical Support Order Now IFN113 IFN113 N-Channel JFET Features • InterFET N0132S Geometry • Low Noise: 1.2 nV/√Hz Typical • High Gain: 15mS Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Low-Noise, High Gain • Replacement for Japanese 2SK113 Description The -50V InterFET IFN113 is a low noise high gain replacement for the Japanese 2SK113 JFET. Gate leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications.
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