N0030L - Process Geometry

InterFET

General Description

The InterFET N0030L Geometry is targeted high impedance low leakage applications.

The low input capacitance makes it ideal for higher frequency applications.

IFN5911, IFN5912 Product Summary Parameters BVGSS Gate to So

Key Features

Low Input Capacitance: 5.0pF Typical.
Low Gate Leakage: 10pA Typical.
High Breakdown Voltage: -30V Typical.
High Input Impedance.
Small Die: 365um X 365um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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N0030L process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0030L
Manufacturer	InterFET
File Size	361.33 KB
Description	Process Geometry
Datasheet	N0030L Datasheet

Full PDF Text Transcription for N0030L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N0030L. For precise diagrams, and layout, please refer to the original PDF.

InterFET Product Folder Technical Support Order Now N0030L N0030L Process Geometry Features • Low Input Capacitance: 5.0pF Typical • Low Gate Leakage: 10pA Typical • High...

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put Capacitance: 5.0pF Typical • Low Gate Leakage: 10pA Typical • High Breakdown Voltage: -30V Typical • High Input Impedance • Small Die: 365um X 365um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • Low-Noise, High Gain Amplifier • Small Signal Amplifier • Custom Part Options Description The InterFET N0030L Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications.

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