N0030L
Features
- Low Input Capacitance: 5.0p F Typical
- Low Gate Leakage: 10p A Typical
- High Breakdown Voltage: -30V Typical
- High Input Impedance
- Small Die: 365um X 365um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- Low-Noise, High Gain Amplifier
- Small Signal Amplifier
- Custom Part Options
Description
The Inter FET N0030L Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for higher frequency applications.
Geometry Top View
S-D
S-D
Test Pattern
Standard Parts
- IFN5911, IFN5912
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-25
-30
40 m...
