N0032H - Process Geometry

InterFET

General Description

The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers.

The low input capacitance makes it ideal for higher frequency applications.

2N3821, 2N3822 2N3823, 2N3824 2N4222, 2N422

Key Features

Low Input Capacitance: 6.0pF Typical.
Low Gate Leakage: 10pA Typical.
High Breakdown Voltage: -60V Typical.
Small Die: 416um X 416um X 203um.
Bond Pads: 90um X 90um.
Substrate Connected to Gate.
Au Back-Side Finish.

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N0032H process geometry by InterFET - Datasheet Preview

Datasheet Details

Part number	N0032H
Manufacturer	InterFET
File Size	357.05 KB
Description	Process Geometry
Datasheet	N0032H Datasheet

Full PDF Text Transcription for N0032H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for N0032H. For precise diagrams, and layout, please refer to the original PDF.

InterFET Product Folder Technical Support Order Now N0032H N0032H Process Geometry Features • Low Input Capacitance: 6.0pF Typical • Low Gate Leakage: 10pA Typical • High...

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put Capacitance: 6.0pF Typical • Low Gate Leakage: 10pA Typical • High Breakdown Voltage: -60V Typical • Small Die: 416um X 416um X 203um • Bond Pads: 90um X 90um • Substrate Connected to Gate • Au Back-Side Finish Applications • General Purpose Amplifier • Small Signal Amplifier • Custom Part Options Description The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers. The low input capacitance makes it ideal for higher frequency applications.

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