InterFET N0032H
The InterFET N0032H Geometry is targeted low leakage general purpose amplifiers. The low input capacitance makes it ideal for higher frequency applications.| Part No. | N0032H |
|---|---|
| Datasheet | N0032H Download |
| Manufacturer |  InterFET |
| Description | Process Geometry |
| Buy | Stock & Price |
FEATURES
● Low Input Capacitance: 6.0pF Typical● Low Gate Leakage: 10pA Typical
● High Breakdown Voltage: -60V Typical
● Small Die: 416um X 416um X 203um
● Bond Pads: 90um X 90um
● Substrate Connected to Gate
● Au Back-Side Finish
APPLICATIONS
● General Purpose Amplifier● Small Signal Amplifier
● Custom Part Options
DESCRIPTION
Geometry Top View 32 G S-D S-D G Test Pattern Standard Parts● 2N3821, 2N3822
● 2N3823, 2N3824
● 2N4222, 2N4222A Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) Gate to Source Cutoff Voltage GFS Forward Transconductance Min Typ Max Unit -50 -60 V 1 22 mA -0.5 -10 V 5 mS
MAXIMUM RATINGS
(@ TA = 25°C, Unless otherwise specified) Parameters Min Typ Max Unit VRGS Reverse Gate to Source or Drain Voltage -50 -60 V IFG Continuous Forward Gate Current 10 mA TJ Operating Junction Temperature -55 150 °C TSTG Storage Temperature -65 175 °C Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions.
