N0032H
Features
- Low Input Capacitance: 6.0p F Typical
- Low Gate Leakage: 10p A Typical
- High Breakdown Voltage: -60V Typical
- Small Die: 416um X 416um X 203um
- Bond Pads: 90um X 90um
- Substrate Connected to Gate
- Au Back-Side Finish
Applications
- General Purpose Amplifier
- Small Signal Amplifier
- Custom Part Options
Description
The Inter FET N0032H Geometry is targeted low leakage general purpose amplifiers. The low input capacitance makes it ideal for higher frequency applications.
Geometry Top View
S-D
S-D
Test
Pattern
Standard Parts
- 2N3821, 2N3822
- 2N3823, 2N3824
- 2N4222, 2N4222A
Product Summary
Parameters
BVGSS Gate to Source Breakdown Voltage
IDSS Drain to Source Saturation Current
VGS(off) Gate to Source Cutoff Voltage
Forward Transconductance
Min
Typ
Max
Unit
-50
-60
22 m...
