InterFET NJ132L
Silicon Junction Field-Effect Transistor Low-Noise Amplifier
| Part No. | NJ132L |
|---|---|
| Datasheet | NJ132L Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor Low-Noise Amplifier |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage (pulsed) gfs gfs Ciss Ciss e ¯N 15 15 15 3.5 1 mS mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 5 – 0.5 Min – 15 Typ – 25 – 50 – 100 100 –7 Max Unit V nA mA V NJ132L Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VDS = 10V, VGS = ØV VDS = 10V, ID = 1 nA VDS = 10V, VGS = ØV VDS = 10V, ID = 5 mA VDS = 10V, VGS = ØV VDS = ØV, VGS = – 10V f = 1 kHz f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 4V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-35 NJ132L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.5 V Drain Current as a Function of VGS(OFF) 10 IDSS = 8 mA 50 VGS = Ø V Drain Current in mA VGS = –0.5 V 30 VGS =...