INTERFET NJ132
Silicon Junction Field-Effect Transistor
| Part No. | NJ132 |
|---|---|
| Datasheet | NJ132 Download |
| Manufacturer |  INTERFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Drain Source ON Resistance Input Capacitance Feedback Capacitance Turn On Delay Time Rise Time Turn Off Delay Time rds(on) Ciss Ciss td(on) tr td(off) 25 12 2.5 6 5 50 Ω pF pF ns ns ns V(BR)GSS IGSS IDSS VGS(OFF) 10 – 0.5 Min – 30 Typ – 45 – 10 – 100 150 –7 Max Unit V pA mA V NJ132 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 20V, VDS = ØV VDS = 20V, VGS = ØV VDS = 20V, ID = 1 nA ID = 1 mA, VGSS = ØV VDS = 20V, VGS = ØV VDS = ØV, VGS = – 10V VDD = – 10V, ID = 10 mA RL = 10V, VGS(ON) = ØV VGS(OFF) = – 6V f = 1 kHz f = 1 MHz f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-33 NJ132 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð4.5 V Gfs as a Function of VGS(OFF) 40 Transconductance in mS 100 VGS = Ø V Drain Cu...