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F-32
01/99
NJ132 Process
Silicon Junction Field-Effect Transistor
¥ High Speed Switch ¥ Low-Noise Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the NJ132 Process. Datasheet
2N4391, 2N4392 2N4393 2N4856, 2N4857 2N4858, 2N4859 2N4860, 2N4861 2N4856A, 2N4857A 2N4858A, 2N4859A
Datasheet
2SK113 IFN113 2N4860A, 2N4861A J111, J112 J113
www.DataSheet4U.