Click to expand full text
F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise
10 mA +150°C – 65°C to +175°C
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
Device in this Databook based on the NJ1800DL Process. Datasheet
IF1801
S
Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate.
www.DataSheet4U.
NJ1800DL Datasheet
