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F-6
01/99
NJ16 Process
Silicon Junction Field-Effect Transistor
¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.017" X 0.017" All Bond Pads = 0.004" Sq. Substrate is also Gate.
Devices in this Databook based on the NJ16 Process. Datasheet
2N3954, 2N3955 2N3956 2N3957, 2N3958 2N4220, 2N4220A 2N4221, 2N4221A 2N4338, 2N4339 2N4340, 2N4341 2N4867, 2N4867A 2N4868, 2N4868A www.DataSheet4U.