InterFET NJ16
Silicon Junction Field-Effect Transistor
| Part No. | NJ16 |
|---|---|
| Datasheet | NJ16 Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage DynamicELECTRICAL CHARACTERISTICS
Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 2.2 3.5 1.2 6 mS pF pF V(BR)GSS IGSS IDSS VGS(OFF) 0.2 – 0.8 Min – 50 Typ – 60 – 10 – 100 9 – 5.5 Max Unit V pA mA V NJ16 Process Test Conditions IG = – 1 µA, VDS = ØV VGS = – 30V, VDS = ØV VDS = 15V, VGS = ØV VDS = 15V, ID = 1 nA VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-7 NJ16 Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.5 V Gfs as a Function of VGS(OFF) 3.0 Transconductance in mS 5 VGS = Ø V Drain Current in µA 4 VGS = – 0.5 V 3 VGS = –1.0 V 2 VGS = –1.5 V 1 VGS = –2.0 V 0 5 10 15 2...