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NJ14AL - Silicon Junction Field-Effect Transistor

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Datasheet Details

Part number NJ14AL
Manufacturer InterFET
File Size 149.71 KB
Description Silicon Junction Field-Effect Transistor
Datasheet download datasheet NJ14AL Datasheet
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F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Ghz Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. Devices in this Databook based on the NJ14AL Process. Datasheet IF140, IF140A IF142 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance NJ14AL Process Min V(BR)GSS IGSS VGS(OFF) IDSS – 0.
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