InterFET NJ14AL
Silicon Junction Field-Effect Transistor
| Part No. | NJ14AL |
|---|---|
| Datasheet | NJ14AL Download |
| Manufacturer |  InterFET |
| Description | Silicon Junction Field-Effect Transistor |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) DynamicELECTRICAL CHARACTERISTICS
Common Source Forward Transconductance NJ14AL Process Min V(BR)GSS IGSS VGS(OFF) IDSS – 0.5 0.5 10 – 15 Typ – 22 – 2.0 – 100 –7 20 Max Unit V pA V mA Test Conditions IG = – 1 µA, VDS = ØV VGS = – 10V, VDS = ØV VGS = 10V, ID = 1 nA VDS = 10V, VGS = ØV gfs Ciss e ¯N 5.5 2.3 0.5 4 mS pF pF VDS = 10V, VGS = ØV VDS = 15V, VGS = ØV VDS = 15V, VGS = ØV f = 1 kHz f = 1 MHz f = 1 MHz f = 1 kHz Common Source Input Capacitance Equivalent Noise Voltage Common Source Reverse Transfer Capacitance Crss nV/√HZ VDS = 10V, ID = 5 mA 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 01/99 F-5 NJ14AL Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS VGS(OFF) = Ð2.2 V Gfs as a Function of VGS(OFF) 10 Transconductance in mS 10 Vgs = Ø V Drain Current in µA 8 Vgs = – 0.5 V 6 Vgs =...