PJ32 - Silicon Junction Field-Effect Transistor General Purpose Amplifier

InterFET

Datasheet Details

Part number	PJ32
Manufacturer	InterFET
File Size	149.45 KB
Description	Silicon Junction Field-Effect Transistor General Purpose Amplifier
Datasheet	PJ32 Datasheet

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F-20 01/99 PJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.018" X 0.018" All Bond Pads = 0.004" Sq. Substrate is also Gate. Devices in this Databook based on the PJ32 Process. Datasheet 2N5020, 2N5021 2N5460, 2N5461 2N5462 www.DataSheet4U.com At 25°C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Reverse Gate Leakage Current Drain Saturation Current (Pulsed) Gate Source Cutoff Voltage Dynamic Electrical Characteristics Forward Transconductance Input Capacitance Feedback Capacitance Equivalent Noise Voltage gfs Ciss Crss e ¯N 2.5 3.2 1.