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2N7590T3 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) PD-96930C 2N7590T3 IRHYS67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67134CM 100K Rads (Si) IRHYS63134CM 300K Rads (Si) RDS(on) 0.090Ω 0.090Ω ID 19A 19A International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their bination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.

Key Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating.

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2N7590T3 Distributor