Datasheet Details
| Part number | 2N7581U2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 448.34 KB |
| Description | POWER MOSFET |
| Datasheet | 2N7581U2-InternationalRectifier.pdf |
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Overview: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level IRHNA67164 100 kRads(Si) IRHNA63164 300 kRads(Si) RDS(on) 0.018 0.
| Part number | 2N7581U2 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 448.34 KB |
| Description | POWER MOSFET |
| Datasheet | 2N7581U2-InternationalRectifier.pdf |
|
|
|
IR HiRel R6 S-line technology provides high performance power MOSFETs for space applications.
These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer LET up to 90 (MeV/(mg/cm2).Their bination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.
These devices retain all of the well established advantages of MOSFETs such as voltage control and temperature stability of electrical parameters.
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