2N7588T3 Datasheet | International Rectifier

PD-96986A RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) IRHYS63130CM 300K Rads (Si) RDS(on) 0.042Ω 0.042Ω ID 20A- 20A- International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their bination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as...