Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- l l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited)
G S
24V 1.3mΩ 340A 195A
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AUIRF1324L Datasheet
