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AUIRF1324L - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited) G S 24V 1.3mΩ 340A 195A c www. DataSheet4U. com.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AUTOMOTIVE GRADE AUIRF1324S AUIRF1324L HEXFET® Power MOSFET D PD - 97483 Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) typ. ID (Silicon Limited) ID (Package Limited) G S 24V 1.3mΩ 340A 195A c www.DataSheet4U.com Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .