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AUIRF2804S-7P - Power MOSFET

This page provides the datasheet information for the AUIRF2804S-7P, a member of the AUIRF2804-7P Power MOSFET family.

Description

Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S ID (Package Limited).

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Full PDF Text Transcription

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PD - 97459 AUTOMOTIVE GRADE AUIRF2804S-7P Features l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S ID (Package Limited) Description Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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