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AUIRF2804S-7P - Power MOSFET

Download the AUIRF2804S-7P datasheet PDF. This datasheet also covers the AUIRF2804-7P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S ID (Package Limited).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF2804-7P_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRF2804S-7P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF2804S-7P. For precise diagrams, and layout, please refer to the original PDF.

PD - 97459 AUTOMOTIVE GRADE AUIRF2804S-7P Features l l l l l l l HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240A Advanced Process Tech...

View more extracted text
n) max. ID (Silicon Limited) 40V 1.6mΩ 320A 240A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S ID (Package Limited) Description Specifically designed for Automotive applications, this www.DataSheet4U.com HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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