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AUIRF2804 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area.

Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited).

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AUTOMOTIVE GRADE PD -96290 Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c V(BR)DSS RDS(on) typ. G S ID (Silicon Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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