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AUIRF2805S - Power MOSFET

Download the AUIRF2805S datasheet PDF. This datasheet also covers the AUIRF2805L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l l HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS 55V 4.7mΩ 135A G S RDS(on) max. ID h.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF2805L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for AUIRF2805S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF2805S. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD - 96383A AUIRF2805S AUIRF2805L Features l l l l l l l l l HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175...

View more extracted text
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS 55V 4.7mΩ 135A G S RDS(on) max. ID h Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.