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AUIRF2805 - Power MOSFET

General Description

V(BR)DSS RDS(on) typ.

Key Features

  • l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.

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Full PDF Text Transcription for AUIRF2805 (Reference)

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PD - 97690A AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive...

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ting Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* Description AUIRF2805 HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 3.9m 4.7m 175A 75A G S ID (Package Limited) D Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.