AUIRF2907ZS-7P
Overview
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
- V(BR)DSS RDS(on) typ. 75V 3.0mΩ 3.8mΩ 180A G S max. ID (Silicon Limited) j S (Pin 2, 3, 5, 6, 7) G (Pin 1)
