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AUIRF2907ZS-7P - HEXFET Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D V(BR)DSS RDS(on) typ. 75V 3.0mΩ 3.8mΩ 180A G S max. ID (Silicon Limited) j S (Pin 2, 3, 5, 6, 7) G (Pin 1).

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www.DataSheet4U.com PD - 96321 AUTOMOTIVE GRADE AUIRF2907ZS-7P HEXFET® Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS RDS(on) typ. 75V 3.0mΩ 3.8mΩ 180A G S max. ID (Silicon Limited) j S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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