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AUIRF2907Z - HEXFET Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • HEXFET® Power MOSFET D AUIRF2907Z 75V 4.5mΩ 170A 75A.
  • Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) max. ID (Silicon Limited) G S ID (Package Limited) D.

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PD - 97545 www.DataSheet4U.com AUTOMOTIVE GRADE Features ● ● ● ● ● HEXFET® Power MOSFET D AUIRF2907Z 75V 4.5mΩ 170A 75A ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID (Silicon Limited) G S ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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