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AUIRF2903ZS - Power MOSFET

This page provides the datasheet information for the AUIRF2903ZS, a member of the AUIRF2903ZL Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • G PD - 96380 AUIRF2903ZS AUIRF2903ZL HEXFET® Power MOSFET D V(BR)DSS 30V RDS(on) typ. 1.9mΩ max. 2.4mΩ kS ID (Silicon Limited) 235A ID (Package Limited) 160A.

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AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G PD - 96380 AUIRF2903ZS AUIRF2903ZL HEXFET® Power MOSFET D V(BR)DSS 30V RDS(on) typ. 1.9mΩ max. 2.4mΩ kS ID (Silicon Limited) 235A ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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