Download the AUIRF2903ZS datasheet PDF.
This datasheet also covers the AUIRF2903ZL variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
G
PD - 96380
AUIRF2903ZS AUIRF2903ZL
HEXFET® Power MOSFET
D V(BR)DSS
30V
RDS(on) typ. 1.9mΩ
max. 2.4mΩ
kS ID (Silicon Limited) 235A
ID (Package Limited) 160A.
Note: The manufacturer provides a single datasheet file (AUIRF2903ZL-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF2903ZS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF2903ZS. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Le...
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ature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G PD - 96380 AUIRF2903ZS AUIRF2903ZL HEXFET® Power MOSFET D V(BR)DSS 30V RDS(on) typ. 1.9mΩ max. 2.4mΩ kS ID (Silicon Limited) 235A ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRF2903ZS Datasheet
