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AUIRF2903Z - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ 2.4mΩ 260Ak 160A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S max. ID (Silicon Limited) ID (Package Limited).

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AUTOMOTIVE GRADE PD -96379 AUIRF2903Z HEXFET® Power MOSFET D Features l l l l l l l V(BR)DSS RDS(on) typ. 30V 1.9mΩ 2.4mΩ 260Ak 160A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S max. ID (Silicon Limited) ID (Package Limited) Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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