Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
G
PD - 96380
AUIRF2903ZS AUIRF2903ZL
HEXFET® Power MOSFET
D V(BR)DSS
30V
RDS(on) typ. 1.9mΩ
max. 2.4mΩ
kS ID (Silicon Limited) 235A
ID (Package Limited) 160A.
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AUTOMOTIVE GRADE Features l Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Le...
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ature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G PD - 96380 AUIRF2903ZS AUIRF2903ZL HEXFET® Power MOSFET D V(BR)DSS 30V RDS(on) typ. 1.9mΩ max. 2.4mΩ kS ID (Silicon Limited) 235A ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .