AUIRF2903ZL
Overview
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
- V(BR)DSS 30V RDS(on) typ.
- 9mΩ max. 2.4mΩ kS ID (Silicon Limited) 235A ID (Package Limited) 160A
