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AUIRF2905Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l D 55V 11.1mΩ 14.5mΩ 59A k 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) D.

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Full PDF Text Transcription for AUIRF2905Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF2905Z. For precise diagrams, and layout, please refer to the original PDF.

PD - 96320 AUTOMOTIVE GRADE AUIRFR2905Z HEXFET® Power MOSFET V(BR)DSS Features l l l l l l l D 55V 11.1mΩ 14.5mΩ 59A k 42A Advanced Process Technology Ultra Low On-Resist...

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1.1mΩ 14.5mΩ 59A k 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * RDS(on) typ. G S max. ID (Silicon Limited) ID (Package Limited) D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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