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AUIRF3805S-7P - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • AUIRF3805L-7P HEXFET® Power MOSFET D V(BR)DSS 55V G S S (Pin 2, 3, 5, 6, 7) G (Pin 1) RDS(on) typ. 2.0mΩ imax. 2.6mΩ ID 240A.

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Full PDF Text Transcription for AUIRF3805S-7P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRF3805S-7P. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Ava...

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stance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * AUIRF3805L-7P HEXFET® Power MOSFET D V(BR)DSS 55V G S S (Pin 2, 3, 5, 6, 7) G (Pin 1) RDS(on) typ. 2.0mΩ imax. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

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