Datasheet Details
| Part number | AUIRF3808S |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 225.83 KB |
| Description | Power MOSFET |
| Datasheet |
 AUIRF3808S Datasheet
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General Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Key Features
- HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- VDSS RDS(on) typ. max. ID 75V 5.9m 7.0m 106A G S.