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AUIRF7309Q - Power MOSFET

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF7309Q Dual N/P-Channel MOSFET Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 97655A AUTOMOTIVE GRADE Features l l l l l l l l AUIRF7309Q HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 6 5 Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified* D1 D1 D2 D2 N-CH P-CH V(BR)DSS ID 30V 4.7A -30V -3.5A RDS(on) max. 0.05Ω 0.10Ω P-CHANNEL MOSFET Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.