Datasheet Summary
AUTOMOTIVE GRADE
- 97647
HEXFET® Power MOSFET
Features l l l l l l l l l l
Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified-
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7
D1 D1 D2 D2
N-CH P-CH V(BR)DSS RDS(on) max. ID 30V 3.5A -30V -2.3A 0.10Ω 0.25Ω
6 5
P-CHANNEL MOSFET
Top View
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area....
