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Features
● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dV/dT Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to
Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified *
AUTOMOTIVE GRADE
D G
S
PD - 97598
AUIRFB4410
HEXFET® Power MOSFET
VDSS RDS(on) typ.
max. ID (Silicon Limited) ID (Package Limited)
100V
8.0mΩ 10mΩ 88A
75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRFB4410 Datasheet
