AUIRFB4410 Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 16.51 mm
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS Compliant
- Automotive Qualified * AUTOMOTIVE GRADE D G S PD
- 97598 AUIRFB4410 HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 100V 8.0mΩ 10mΩ 88A 75A
