AUIRFB4410 Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
AUIRFB4410 Key Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dV/dT Rating
- 175°C Operating Temperature
- Fast Switching
- Lead-Free, RoHS pliant
- Automotive Qualified
- AUTOMOTIVE GRADE