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AUIRFR4292 - Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • AUIRFR4292 AUIRFU4292 HEXFET® Power MOSFET D G S Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V (BR)DSS RDS(on) typ. max. ID 250V 275m 345m 9.3A.

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AUTOMOTIVE GRADE PD - 97792 Features ● ● ● ● ● ● ● AUIRFR4292 AUIRFU4292 HEXFET® Power MOSFET D G S Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V (BR)DSS RDS(on) typ. max. ID 250V 275m 345m 9.3A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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