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AUIRFR4292 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • AUIRFR4292 AUIRFU4292 HEXFET® Power MOSFET D G S Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V (BR)DSS RDS(on) typ. max. ID 250V 275m 345m 9.3A.

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Full PDF Text Transcription for AUIRFR4292 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFR4292. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE PD - 97792 Features ● ● ● ● ● ● ● AUIRFR4292 AUIRFU4292 HEXFET® Power MOSFET D G S Advanced Process Technology Low On-Resistance 175°C Operating Temperat...

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Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V (BR)DSS RDS(on) typ. max. ID 250V 275m 345m 9.3A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .

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Infineon Logo AUIRFR4292 Power MOSFET Infineon

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