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AUIRFR5410 - Power MOSFET

General Description

Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • AUIRFR5410 HEXFET® Power MOSFET D.
  • Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • V(BR)DSS RDS(on) max. ID -100V 0.205 -13A G S.

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📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFR5410 Power MOSFET Infineon
AUIRFR540Z Power MOSFET Infineon
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AUIRFR5505 Power MOSFET Infineon
AUIRFR024N Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFR540Z Power MOSFET
AUIRFR5305 AUTOMOTIVE MOSFET
AUIRFR5505 Power MOSFET
AUIRFR024N Power MOSFET
AUIRFR1010Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96344 AUTOMOTIVE GRADE Features ● ● ● ● ● ● ● ● AUIRFR5410 HEXFET® Power MOSFET D ● ● Advanced Planar Technology P-Channel MOSFET Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS RDS(on) max. ID -100V 0.205 -13A G S Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.