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AUIRFU3607 - Advanced Process Technology

Download the AUIRFU3607 datasheet PDF. This datasheet also covers the AUIRFR3607 variant, as both devices belong to the same advanced process technology family and are provided as variant models within a single manufacturer datasheet.

General Description

VDSS RDS(on) typ.

max.

Key Features

  • l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR3607_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU120Z Power MOSFET Infineon
AUIRFU4105Z Power MOSFET Infineon
AUIRFU4292 Power MOSFET Infineon
AUIRFU5305 Power MOSFET Infineon
AUIRFU540Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFU024N Power MOSFET
AUIRFU120Z Power MOSFET
AUIRFU4104 Power MOSFET
AUIRFU4105Z HEXFET Power MOSFET
AUIRFU4292 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96376 AUTOMOTIVE GRADE Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description AUIRFR3607 AUIRFU3607 HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 7.34mΩ 9.0mΩ 80A 56A c Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .