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PD - 97612A
AUTOMOTIVE GRADE
Features
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
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AUIRFZ48Z AUIRFZ48ZS
55V 11mΩ 61A
V(BR)DSS RDS(on) max. ID
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Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRFZ48Z Datasheet
