Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Features
- l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified.
- D
G S
PD - 96385A
AUIRL1404S AUIRL1404L
HEXFET® Power MOSFET
V(BR)DSS
40V
RDS(on) max. ID
4mΩ
h160A.
AUIRL1404L Datasheet
