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AUIRL1404Z - Power MOSFETs

General Description

processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 180A l Automotive Qualified.
  • S ID (Package Limited) 160A.

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📁 Similar Datasheet

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AUIRL1404Z Power MOSFET Infineon
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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 180A l Automotive Qualified * S ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .