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G4PH40UD - IRG4PH40UD

Key Features

  • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode.
  • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations.
  • IGBT co-packaged with.

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www.DataSheet4U.com PD- 91621B IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's .