Datasheet Summary
- 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
Benefits n-channel
Applications
Higher switching frequency capability than petitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing ...