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IP2010PBF - High Frequency GaN-Based Integrated Power Stage

General Description

The iP2010 is a fully optimized, high frequency power stage solution for synchronous buck applications utilizing IR’s Gallium Nitride (GaN)based power device technology platform.

Key Features

  • Input voltage range of 7V to 13.2V Output voltage range of 0.6V to 5.5V Output current up to 30A Benchmark peak and full load efficiency.
  • no heat sink required Operation up to 3MHz Ultrafast, PowIRtuneTM gate driver Wireless, low noise flip-chip design Industry-standard TTL compatible Enable and PWM inputs Small footprint LGA package (7.7mm x 6.5mm x 1.7mm) Pin compatible with iP2011 Desc.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD-97461 iP2010PbF GaNpowIRTM Features • • • • • • • • • • Input voltage range of 7V to 13.2V Output voltage range of 0.6V to 5.5V Output current up to 30A Benchmark peak and full load efficiency – no heat sink required Operation up to 3MHz Ultrafast, PowIRtuneTM gate driver Wireless, low noise flip-chip design Industry-standard TTL compatible Enable and PWM inputs Small footprint LGA package (7.7mm x 6.5mm x 1.7mm) Pin compatible with iP2011 Description The iP2010 is a fully optimized, high frequency power stage solution for synchronous buck applications utilizing IR’s Gallium Nitride (GaN)based power device technology platform. The iP2010 integrates a highly sophisticated, ultra fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device.