IR01D214 Description
The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are patible with standard CMOS or LSTTL outputs.
IR01D214 Key Features
- Output Power MOSFETs in half-bridge configuration
- 500V rated breakdown voltage
- High side gate drive designed for bootstrap
- operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge
- H214 1.1Ω
- H224 3.0Ω
- H420 2.0W 4.0W