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IR2106PBF - HIGH AND LOW SIDE DRIVER

Datasheet Summary

Description

The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

  • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune.
  • Gate drive supply range from 10 to 20V (IR2106(4)).
  • Undervoltage lockout for both channels.
  • 3.3V, 5V and 15V input logic compatible.
  • Matched propagation delay for both channels.
  • Logic and power ground +/- 5V offset.
  • Lower di/dt gate driver for better noise immunity.
  • Outputs in phase.

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Full PDF Text Transcription

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Data Sheet No. PD60162 Rev. W IR2106(4)(S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V (IR2106(4)) • Undervoltage lockout for both channels • 3.3V, 5V and 15V input logic compatible • Matched propagation delay for both channels • Logic and power ground +/- 5V offset.
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