IR2106S Datasheet | International Rectifier

Features - Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage d V/dt immune - Gate drive supply range from 10 to 20V (IR2106(4)) - Undervoltage lockout for both channels - 3.3V, 5V and 15V input logic patible - Matched propagation delay for both channels - Logic and power ground +/- 5V offset. - Lower di/dt gate driver for better noise immunity - Outputs in phase with inputs (IR2106) - Also available LEAD-FREE 8-Lead SOIC 8-Lead PDIP 14-Lead SOIC 14-Lead PDIP Description 2106/2301//2108//2109/2302/2304Feature parison The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL output, Part Input logic 2106/2301 21064 2108 21084 2109/2302 21094 HIN/LIN HIN/LIN IN/SD HIN/LIN Crossconduction prevention logic no yes yes yes Dead-Time none Internal 540ns Programmable 0.54~5µs Internal 540ns Programmable 0.54~5µs Internal 100ns Ground Pins VSS/ VSS/ VSS/ Ton/Toff 220/200 220/200 750/200 160/140 down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Typical...