Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
www. irf. com
7
IRF1010ES/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" Note: "P" in as sembly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMB ER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L
OR
INT E RNAT IONAL RECT IF IE.
IRF1010ELPbF Datasheet
