IRF1010EZS - AUTOMOTIVE MOSFET

This page provides the datasheet information for the IRF1010EZS, a member of the IRF1010EZ AUTOMOTIVE MOSFET family.

Product Overview

International Rectifier

Datasheet Details

Part number	IRF1010EZS
Manufacturer	International Rectifier
File Size	285.32 KB
Description	AUTOMOTIVE MOSFET
Datasheet	IRF1010EZS Datasheet
Additional preview pages of the IRF1010EZS datasheet.

IRF1010EZS Product details

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S.

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Other Datasheets by International Rectifier

IRF1010EZSPBF - POWER MOSFET
IRF1010EZ - AUTOMOTIVE MOSFET
IRF1010EZL - AUTOMOTIVE MOSFET
IRF1010EZLPbF - POWER MOSFET
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IRF1010E - Power MOSFET
IRF1010EL - Power MOSFET
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Published: Jan 24, 2006 |