Datasheet4U Logo Datasheet4U.com

IRF1010EZL - AUTOMOTIVE MOSFET

Download the IRF1010EZL datasheet PDF. This datasheet also covers the IRF1010EZ variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1010EZ_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF1010EZ N-Channel MOSFET INCHANGE
IRF1010EZS N-Channel MOSFET INCHANGE
IRF1010E N-Channel MOSFET INCHANGE
IRF1010ES N-Channel MOSFET INCHANGE
IRF1010 N-Channel Power MOSFET nELL

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1010EZLPbF POWER MOSFET
IRF1010EZ AUTOMOTIVE MOSFET
IRF1010EZPbF POWER MOSFET
IRF1010EZS AUTOMOTIVE MOSFET
IRF1010EZSPBF POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95483 AUTOMOTIVE MOSFET Features O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .