IRF1010EZPbF - POWER MOSFET

This page provides the datasheet information for the IRF1010EZPbF, a member of the IRF1010EZSPBF POWER MOSFET family.

Product Overview

International Rectifier

Datasheet Details

Part number	IRF1010EZPbF
Manufacturer	International Rectifier
File Size	404.58 KB
Description	POWER MOSFET
Datasheet	IRF1010EZPbF Datasheet
Additional preview pages of the IRF1010EZPbF datasheet.

IRF1010EZPbF Product details

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S.

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Other Datasheets by International Rectifier

IRF1010EZ - AUTOMOTIVE MOSFET
IRF1010EZL - AUTOMOTIVE MOSFET
IRF1010EZLPbF - POWER MOSFET
IRF1010EZS - AUTOMOTIVE MOSFET
IRF1010EZSPBF - POWER MOSFET
IRF1010E - Power MOSFET
IRF1010EL - Power MOSFET
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Published: Aug 29, 2010 |