IRF1010 Datasheet PDF | Nell Power Semiconductor

Nell Power Semiconductor IRF1010

IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits.

Part No.	IRF1010
Datasheet	IRF1010 Download
Manufacturer	Nell Power Semiconductor
Description	N-Channel Power MOSFET
Buy	Stock & Price

DESCRIPTION

The Nell threshold voltage of 4 volts. G G D S TO-220AB (IRF1010A) D S

FEATURES

RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF1010H) D (Drain) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (mΩ) QG(nC) max. 84 75 60 8.5 @ V GS = 10V 86 G (Gate) S (Source)

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage V GS =10V, T C =25°C Continuous Drain Current (Note 1) TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 60 60 ±20 84 60 UNIT V V GS =10V, T C =100°C Pulsed Drain current(Note 2) Avalanche current(Note 2) Repetitive avalanche energy(Note 2 ) Single pulse avalanche energy(Note 3) Peak diode recovery d...