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IRF1010 - N-Channel Power MOSFET

General Description

The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max.

threshold voltage of 4 volts.

Key Features

  • RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max. ) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF1010H) D (Drain).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. G G D S TO-220AB (IRF1010A) D S FEATURES RDS(ON) = 8.5mΩ @ VGS = 10V Ultra low gate charge(86nC max.